Microwave & Radar Engineering (The Traveling -Wave Tube)

The Traveling-Wave Tube

The TRAVELING-WAVE TUBE (twt) is a high-gain, low-noise, wide-bandwidth microwave amplifier. It is capable of gains greater than 40 dB with bandwidths exceeding an octave. (A bandwidth of 1 octave is one in which the upper frequency is twice the lower frequency.) Traveling-wave tubes have been designed for frequencies as low as 300 megahertz and as high as 50 gigahertz. The twt is primarily a voltage amplifier. The wide-bandwidth and low-noise characteristics make the twt ideal for use as an rf amplifier in microwave equipment. The physical construction of a typical twt is shown in figure 2-13. The twt contains an electron gun which produces and then accelerates an electron beam along the axis of the tube. The surrounding magnet provides a magnetic field along the axis of the tube to focus the electrons into a tight beam. The HELIX, at the center of the tube, is a coiled wire that provides a low-impedance transmission line for the rf energy within the tube. The rf input and output are coupled onto and removed from the helix by directional couplers that have no physical connection to the helix. If the rf energy is transported on coaxial cables, the coaxial couplers are wound in a helical manner similar to that shown in figure 2-13. If the rf energy is transported in waveguides, waveguide directional couplers are used. The attenuator prevents any reflected
waves from travelling wave back down to the helix.

A simplified version of twt operation is shown in figure 2-14.
In the figure, an electron beam is passing along a nonresonant transmission line represented by a straight wire. The input to the transmission line is an rf wave which travels on the line from input to output. The line will transport a wide range of rf frequencies if it is terminated in the characteristic impedance of the line. The electromagnetic waves traveling down the line produce electric fields that interact withthe electrons of the beams

If the electrons of the beam were accelerated to travel faster than the waves traveling on the wire, bunching would occur through the effect of velocity modulation. Velocity modulation would be caused by the interaction between the traveling-wave fields and the electron beam. Bunching would cause the electrons to give up energy to the traveling wave if the fields were of the correct polarity to slow down the bunches. The energy from the bunches would increase the amplitude of the traveling wave in a progressive action that would take place all along the length of the twt, as shown in figure 2-14. However, because the waves travel along the wire at the speed of light, the simple twt shown in figure 2-14 will not work. At present no way is known to accelerate an electron beam to the speed of light. Since the electron beam cannot travel faster than the wave on the wire, bunching will not take place and the tube will not work. The twt is therefore designed with a delay structure to slow the traveling wave down to or below the speed of the electrons in the beam. A common twt delay structure is a wire, wound in the form of a long coil or helix, as shown in figure 2-15, view (A). The shape of the helix slows the effective velocity of the wave along the common axis of the helix and the tube to about one-tenth the speed of light. The wave still travels down the helix wire at the speed of light, but the coiled shape causes the wave to travel a much greater total distance than the electron beam. The speed at which the wave travels down the tube can be varied by changing the number of turns or the diameter of the turns in the helix wire. The helical delay structure works well because it has the added advantage of causing a large proportion of electric fields that are parallel to the electron beam. The parallel fields provide maximum interaction between the fields and the electron beam.

In a typical twt, the electron beam is directed down the center of the helix while, at the same time, an rf signal is coupled onto the helix. The electrons of the beam are velocity-modulated by the electric fields produced by the rf signal. Amplification begins as the electron bunches form and release energy to the signal on the helix. The slightly amplified signal causes a denser electron bunch which, in turn, amplifies the signal even more. The amplification process is continuous as the rf wave and the electron beam travel down the length of the tube. Any portion of the twt output signal that reflects back to the input will cause oscillations within the tube which results in a decrease in amplification. Attenuators are placed along the length of the helix to prevent reflections from reaching the input. The attenuator causes a loss in amplitude, as can be seen in figure 2-15, view (B), but it can be placed so as to minimize losses while still isolating the input from the output. The relatively low efficiency of the twt partially offsets the advantages of high gain and wide bandwidth. The internal attenuator reduces the gain of the tube, and the power required to energize the focusing magnet is an operational loss that cannot be recovered. The twt also produces heat which must be dissipated by either air-conditioning or liquid-cooling systems. All of these factors reduce the overall efficiency of the twt, but the advantages of high gain and wide bandwidth are usually enough to overcome the disadvantages.

Basic Of Electronics Engineering (Bipolar Junction Transistors)

Bipolar Junction Transistors (BJT)

Introduction
A Bipolar Transistor essentially consists of a pair of PN Junction Diodes that are joined back-to-back. This forms a sort of a sandwich where one kind of semiconductor is placed in between two others. There are therefore two kinds of Bipolar sandwich, the NPN and PNP varieties. The three layers of the sandwich are conventionally called the Collector, Base, and Emitter. The reasons for these names will become clear later once we see how the transistor works

Some of the basic properties exhibited by a Bipolar Transistor are immediately recognisable as being diode-like. However, when the 'filling' of the sandwich is fairly thin some interesting effects become possible that allow us to use the Transistor as an amplifier or a switch. To see how the Bipolar Transistor works we can concentrate on the NPN variety

Figure 1 shows the energy levels in an NPN transistor when we aren't externally applying any voltages. We can see that the arrangement looks like a back-to-back pair of PN Diode junctions with a thin P-type filling between two N-type slices of 'bread'. In each of the N-type layers conduction can take place by the free movement of electrons in the conduction band. In the P-type (filling) layer conduction can take place by the movement of the free holes in the valence band. However, in the absence of any expernally applied electric field, we find that depletion zones form at both PN-Junctions, so no charge wants to move from one layer to another

Consider now what happens when we apply a moderate voltage between the Collector and Base parts of the transistor. The polarity of the applied voltage is chosen to increase the force pulling the N-type electrons and P-type holes apart. (i.e. we make the Collector positive with respect to the Base.) This widens the depletion zone between the Collector and base and so no current will flow. In effect we have reverse-biassed the Base-Collector diode junction. The precise value of the Base-Collector voltage we choose doesn't really matter to what happens provided we don't make it too big and blow up the transistor! So for the sake of example we can imagine applying a 10 Volt Base-Collector voltage

Now consider what happens when we apply a relatively small Emitter-Base voltage whose polarity is designed to forward-bias the Emitter-Base junction. This 'pushes' electrons from the Emitter into the Base region and sets up a current flow across the Emitter-Base boundary. Once the electrons have managed to get into the Base region they can respond to the attractive force from the positively-biassed Collector region. As a result the electrons which get into the Base move swiftly towards the Collector and cross into the Collector region. Hence we see a Emitter-Collector current whose magnitude is set by the chosen Emitter-Base voltage we have applied. To maintain the flow through the transistor we have to keep on putting 'fresh' electrons into the emitter and removing the new arrivals from the Collector. Hence we see an external current flowing in the circuit.The precise value of the chosen Emitter-Base voltage isn't important to our argument here, but it does determine the amount of current we'll see. For the sake of example we've chosen a half a volt. Since the Emitter-Base junction is a PN diode we can expect to see a current when we apply forward voltages of this sort of size. In practice with a Bipolar transistor made using Silicon we can expect to have to use an Emitter-Base voltage in the range from around a half volt up to almost one volt. Higher voltages tend to produce so much current that they can destroy the transistor!It is worth noting that the magnitude of the current we see isn't really affected by the chosen Base-Collector voltage. This is because the current is mainly set by how easy it is for electrons to get from the Emitter into the Base region. Most (but not all!) the electrons that get into the Base move straight on into the Collector provided the Collector voltage is positive enough to draw them out of the Base region. That said, some of the electrons get 'lost' on the way across the Base. This process is illustrated in Figure 4

Some of the free electrons crossing the Base encounter a hole and 'drop into it'. As a result, the Base region loses one of its positive charges (holes) each time this happens. If we didn't do anything about this we'd find that the Base potential would become more negative (i.e. 'less positive' becuase of the removal of the holes) until it was negative enough to repel any more electrons from crossing the Emitter-Base junction. The current flow would then stop.To prevent this happening we use the applied Emitter-Base voltage to remove the captured electrons from the Base and maintain the number of holes it contains. This have the overall effect that we see some of the electrons which enter the transistor via the Emitter emerging again from the Base rather than the Collector. For most practical Bipolar Transistors only about 1% of the free electrons which try to cross Base region get caught in this way. Hence we see a Base Current, IB, which is typically around one hundred times smaller than the Emitter Current, IE
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals are emitter, collector, and base. A transistor can be either NPN or PNP. See the schematic representations below

Note that the direction of the emitter arrow defines the type transistor. Biasing and power supply polarity are positive for NPN and negative for PNP transistors. The transistor is primarily used as an current amplifier. When a small current signal is applied to the base terminal, it is amplified in the collector circuit. This current amplification is referred to as HFE or beta and equals Ic/Ib.
As with all semiconductors, breakdown voltage is a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals. i.e. Vce, Vbe,and Vcb. However, Vce(collector-emitter voltage) with open base, designated as Vceo, is usually of most concern and defines the maximum circuit voltage.
Also as with all semiconductors there are undesireable leakage currents, notably Icbo ,collector junction leakage; and Iebo, emitter junction leakage. A typical collector characteristic curve is shown below:

Their work led them first to the point-contact transistor and then to the bipolar junction transistor. Since then, the technology has progressed rapidly. The development of a planar process yielded the first circuits on a chip and for a decade, bipolar transistor operational amplifiers and digital TTL circuits were the workhorses of any circuit designer.
The spectacular rise of the MOSFET market share during the last decade has completely removed the bipolar transistor from center stage. Almost all logic circuits, microprocessor and memory chips contain exclusively MOSFETs.
Nevertheless, bipolar transistors remain important devices for ultra-high-speed discrete logic circuits such as emitter coupled logic (ECL), power-switching applications and in microwave power amplifiers.
In this chapter we first present the structure of the bipolar transistor and show how a three-layer structure with alternating n-type and p-type regions can provide current and voltage amplification. We then present the ideal transistor model and derive an expression for the current gain in the forward active mode of operation. Next, we discuss the non-ideal effects, the modulation of the base width and recombination in the depletion region of the base-emitter junction.
Structure and principle of operation
A bipolar junction transistor consists of two back-to-back p-n junctions, who share a thin common region with width, wB. Contacts are made to all three regions, the two outer regions called the emitter and collector and the middle region called the base. The structure of an NPN bipolar transistor is shown in Figure 1 (a). The device is called "bipolar" since its operation involves both types of mobile carriers, electrons and holes.

Basic Of Electronics Engineering (P-N Junction)

P-N Junction

One of the crucial keys to solid state electronics is the nature of the P-N junction. When p-type and n-type materials are placed in contact with each other, the junction behaves very differently than either type of material alone. Specifically, current will flow readily in one direction (forward biased) but not in the other (reverse biased), creating the basic diode. This non-reversing behavior arises from the nature of the charge transport process in the two types of materials.

The open circles on the left side of the junction above represent "holes" or deficiencies of electrons in the lattice which can act like positive charge carriers. The solid circles on the right of the junction represent the available electrons from the n-type dopant. Near the junction, electrons diffuse across to combine with holes, creating a "depletion region". The energy level sketch above right is a way to visualize the equilibrium condition of the P-N junction. The upward direction in the diagram represents increasing electron energy

Depletion Region
When a p-n junction is formed, some of the free electrons in the n-region diffuse across the junction and combine with holes to form negative ions. In so doing they leave behind positive ions at the donor impurity sites.

Depletion Region Details

In the p-type region there are holes from the acceptor impurities and in the n-type region there are extra electrons

When a p-n junction is formed, some of the electrons from the n-region which have reached the conduction band are free to diffuse across the junction and combine with holes

Filling a hole makes a negative ion and leaves behind a positive ion on the n-side. A space charge builds up, creating a depletion region which inhibits any further electron transfer unless it is helped by putting a forward bias on the junction

Bias effect on electrons in depletion zone

Equilibrium of junction

Coulomb force from ions prevents further migration across the p-n junction. The electrons which had migrated across from the N to the P region in the forming of the depletion layer have now reached equilibrium. Other electrons from the N region cannot migrate because they are repelled by the negative ions in the P region and attracted by the positive ions in the N region.

Reverse bias
An applied voltage with the indicated polarity further impedes the flow of electrons across the junction. For conduction in the device, electrons from the N region must move to the junction and combine with holes in the P region. A reverse voltage drives the electrons away from the junction, preventing conduction.

Forward bias
An applied voltage in the forward direction as indicated assists electrons in overcoming the coulomb barrier of the space charge in depletion region. Electrons will flow with very small resistance in the forward direction.

Microwave & Radar Engineering (MICROWAVE TUBES)

MICROWAVE TUBES

Microwave tubes perform the same functions of generation and amplification in the microwave portion of the frequency spectrum that vacuum tubes perform at lower frequencies. This section will explain the basic operation of the most widely used microwave tubes, including klystrons, traveling-wave tubes, backward-wave oscillators, magnetrons, and crossed-field amplifiers. The variations of these tubes for use in specific applications are so numerous that all of them cannot be discussed in this module. However, general principles of operation are similar in all of the variations so the explanations will be restricted to the general principles of operation.



The Basic Two-Cavity Klystron Klystrons


The basic of two cavity klystrons are velocity-modulated tubes that are used in radar and communications equipment as oscillators and amplifiers. Klystrons make use of the transit-time effect by varying the velocity of an electron beam in much the same manner as the previously discussed velocity-modulation process. Strong electrostatic fields are necessary in the klystron for efficient operation. This is necessary because the interaction of the signal and the electron beam takes place in a very short distance. The construction and essential components of a TWO-CAVITY KLYSTRON are shown in figure 2-7A. Figure 2-7B is a schematic representation of the same tube. When the tube is energized, the cathode emits electrons which are focused into a beam by a low positive voltage on the control grid. The beam is then accelerated by a very high positive dc potential that is applied in equal amplitude to both the accelerator grid and the buncher grids. The buncher grids are connected to a cavity resonator that superimposes an ac potential on the dc voltage. Ac potentials are produced by oscillations within the cavity that begin spontaneously when the tube is energized. The initial oscillations are caused by random fields and circuit imbalances that are present when the circuit is energized. The oscillations within the cavity produce an oscillating electrostatic field between the buncher grids that is at the same frequency as the natural frequency of the cavity. The direction of the field changes with the frequency of the cavity. These changes alternately accelerate and decelerate the electrons of the beam passing through the grids. The area beyond the buncher grids is called the DRIFT SPACE. The electrons form bunches in this area when the accelerated electrons overtake the decelerated electrons.

Figure 2-7A.—Functional and schematic diagram of a two-cavity klystron.

Figure 2-7B.—Functional and schematic diagram of a two-cavity klystron.
The function of the CATCHER GRIDS is to absorb energy from the electron beam. The catcher grids are placed along the beam at a point where the bunches are fully formed. The location is determined by the transit time of the bunches at the natural resonant frequency of the cavities (the resonant frequency of the catcher cavity is the same as the buncher cavity). The location is chosen because maximum energy transfer to the output (catcher) cavity occurs when the electrostatic field is of the correct polarity to slow down the electron bunches. The two-cavity klystron in figure 2-7A and B may be used either as an oscillator or an amplifier. The configuration shown in the figure is correct for oscillator operation. The feedback path provides energy of the proper delay and phase relationship to sustain oscillations. A signal applied at the buncher grids will be amplified if the feedback path is removed.
Q-1. What is the basic principle of operation of a klystron?
Q-2. The electrons in the beam of a klystron are speeded up by a high dc potential applied to what elements?

Q-3. The two-cavity klystron uses what cavity as an output cavity?

Q-4. A two-cavity klystron without a feedback path will operate as what type of circuit?

The Multicavity Power Klystron

Klystron amplification, power output, and efficiency can be greatly improved by the addition of intermediate cavities between the input and output cavities of the basic klystron. Additional cavities serve to velocity-modulate the electron beam and produce an increase in the energy available at the output. Since all intermediate cavities in a multicavity klystron operate in the same manner, a representative THREE-CAVITY KLYSTRON will be discussed. A three-cavity klystron is illustrated in figure 2-8. The entire DRIFT-TUBE ASSEMBLY, the three CAVITIES, and the COLLECTOR PLATE of the three-cavity klystron are operated at ground potential for reasons of safety. The electron beam is formed and accelerated toward the drift tube by a large negative pulse applied to the cathode. MAGNETIC FOCUS COILS are placed around the drift tube to keep the electrons in a tight beam and away from the side walls of the tube. The focus of the beam is also aided by the concave shape of the cathode in high-powered klystrons

Figure 2-8.—Three-cavity klystron
The output of any klystron (regardless of the number of cavities used) is developed by velocity modulation of the electron beam. The electrons that are accelerated by the cathode pulse are acted upon by rf fields developed across the input and middle cavities. Some electrons are accelerated, some are decelerated, and some are unaffected. Electron reaction depends on the amplitude and polarity of the fields across the cavities when the electrons pass the cavity gaps. During the time the electrons are traveling through the drift space between the cavities, the accelerated electrons overtake the decelerated electrons to form bunches. As a result, bunches of electrons arrive at the output cavity at the proper instant during each cycle of the rf field and deliver energy to the output cavity. Only a small degree of bunching takes place within the electron beam during the interval of travel from the input cavity to the middle cavity. The amount of bunching is sufficient, however, to cause oscillations within the middle cavity and to maintain a large oscillating voltage across the input gap. Most of the velocity modulation produced in the three-cavity klystron is caused by the voltage across the input gap of the middle cavity. The high voltage across the gap causes the bunching process to proceed rapidly in the drift space between the middle cavity and the output cavity. The electron bunches cross the gap of the output cavity when the gap voltage is at maximum negative. Maximum energy transfer from the electron beam to the output cavity occurs under these conditions. The energy given up by the electrons is the kinetic energy that was originally absorbed from the cathode pulse. Klystron amplifiers have been built with as many as five intermediate cavities in addition to the input and output cavities. The effect of the intermediate cavities is to improve the electron bunching process which improves amplifier gain. The overall efficiency of the tube is also improved to a lesser extent. Adding more cavities is roughly the same as adding more stages to a conventional amplifier. The overall amplifier gain is increased and the overall bandwidth is reduced if all the stages are tuned to the same frequency. The same effect occurs with multicavity klystron tuning. A klystron amplifier tube will deliver high gain and a narrow bandwidth if all the cavities are tuned to the same frequency. This method of tuning is called SYNCHRONOUS TUNING. If the cavities are tuned to slightly different frequencies, the gain of the amplifier will be reduced but the bandwidth will be appreciably increased. This method of tuning is called STAGGERED TUNING.

Q-1. How is the electron beam of a three-cavity klystron accelerated toward the drift tube?

Q-2. Which cavity of a three-cavity klystron causes most of the velocity modulation? Q-18. In a multicavity klystron, tuning all the cavities to the same frequency has what effect on the bandwidth of the tube?

Q-3. The cavities of a multicavity klystron are tuned to slightly different frequencies in what method of tuning?

The Reflex Klystron

Another tube based on velocity modulation, and used to generate microwave energy, is the REFLEX KLYSTRON (figure 2-9). The reflex klystron contains a REFLECTOR PLATE, referred to as the REPELLER, instead of the output cavity used in other types of klystrons. The electron beam is modulated as it was in the other types of klystrons by passing it through an oscillating resonant cavity, but here the similarity ends. The feedback required to maintain oscillations within the cavity is obtained by reversing the beam and sending it back through the cavity. The electrons in the beam are velocity-modulated before the beam passes through the cavity the second time and will give up the energy required to maintain oscillations. The electron beam is turned around by a negatively charged electrode that repels the beam. This negative element is the repeller mentioned earlier. This type of klystron oscillator is called a reflex klystron because of the reflex action of the electron beam

Figure 2-9.—Functional diagram of a reflex klystron.
Three power sources are required for reflex klystron operation: (1) filament power, (2) positive resonator voltage (often referred to as beam voltage) used to accelerate the electrons through the grid gap of the resonant cavity, and (3) negative repeller voltage used to turn the electron beam around. The electrons are focused into a beam by the electrostatic fields set up by the resonator potential (B+) in the body of the tube. Note in figure 2-9 that the resonator potential is common to the resonator cavity, the accelerating grid, and the entire body of the tube. The resonator potential also causes the resonant cavity to begin oscillating at its natural frequency when the tube is energized. These oscillations cause an electrostatic field across the grid gap of the cavity that changes direction at the frequency of the cavity. The changing electrostatic field affects the electrons in the beam as they pass through the grid gap. Some are accelerated and some are decelerated, depending upon the polarity of the electrostatic field as they pass through the gap. Figure 2-10, view (A), illustrates the three possible ways an electron can be affected as it passes through the gap (velocity increasing, decreasing, or remaining constant). Since the resonant cavity is oscillating, the grid potential is an alternating voltage that causes the electrostatic field between the grids to follow a sine-wave curve as shown in figure 2-10, view (B). As a result, the velocity of the electrons passing through the gap is affected uniformly as a function of that sine wave. The amount of velocity change is dependent on the strength and polarity of the grid voltage.

2-10.—Electron bunching diagram.

The variation in grid voltage causes the electrons to enter the space between the grid and the repeller at various velocities. For example, in figure 2-10, views (A) and (B), the electrons at times 1 and 2 are speeded up as they pass through the grid. At time 3, the field is passing through zero and the electron is unaffected. At times 4 and 5, the grid field is reversed; the electrons give up energy because their velocity is reduced as they pass through the grids. The distance the electrons travel in the space separating the grid and the repeller depends upon their velocity. Those moving at slower velocities, such as the electron at time 4, move only a short distance from the grid before being affected by the repeller voltage. When this happens, the electron is forced by the repeller voltage to stop, reverse direction, and return toward the grid. The electrons moving at higher velocities travel further beyond the grid before reversing direction because they have greater momentum. If the repeller voltage is set at the correct value, the electrons will form a bunch around the constant-speed electrons. The electrons will then return to the grid gap at the instant the electrostatic field is at the correct polarity to cause maximum deceleration of the bunch. This action is also illustrated in figure 2-10, view (A). When the grid field provides maximum deceleration, the returning electrons release maximum energy to the grid field which is in phase with cavity current. Thus, the returning electrons supply the regenerative feedback required to maintain cavity oscillations. The constant-speed electrons must remain in the reflecting field space for a minimum time of 3/4 cycle of the grid field for maximum energy transfer. The period of time the electrons remain in the repeller field is determined by the amount of negative repeller voltage. The reflex klystron will continue to oscillate if the electrons remain in the repeller field longer than 3/4 cycle (as long as the electrons return to the grid gap when the field is of the proper polarity to decelerate the electrons). Figure 2-11 shows the effect of the repeller field on the electron bunch for 3/4 cycle and for 1 3/4 cycles. Although not shown in the figure, the constant-velocity electrons may remain in the repeller field for any number of cycles over the minimum 3/4 cycle. If the electrons remain in the field for longer than 3/4 cycle, the difference in electron transit time causes the tube performance characteristics to change. The differences in operating characteristics are identified by MODES OF OPERATION.

2-11.—Bunching action of a reflex klystron.

The reflex klystron operates in a different mode for each additional cycle that the electrons remain in the repeller field. Mode 1 is obtained when the repeller voltage produces an electron transit time of 3/4 cycle. Additional modes follow in sequence. Mode 2 has an electron transit time of 1 3/4 cycles; mode 3 has an electron transit time of 2 3/4 cycles; etc. The physical design of the tube limits the number of modes possible in practical applications. A range of four modes of operation are normally available. The actual mode used (1 3/4 cycles through 4 3/4 cycles, 2 3/4 cycles through 6 3/4 cycles, etc.) depends upon the application. The choice of mode is determined by the difference in power available from each mode and the band of frequencies over which the circuit can be tuned.

Microwave & Radar Engineering (Tube Principle & Limitation Of Conventional Tubes)

MICROWAVE TUBE PRINCIPLES

The efficiency of conventional tubes is largely independent of frequency up to a certain limit. When frequency increases beyond that limit, several factors combine to rapidly decrease tube efficiency. Tubes that are efficient in the microwave range usually operate on the theory of VELOCITY MODULATION, a concept that avoids the problems encountered in conventional tubes. Velocity modulation is more easily understood if the factors that limit the frequency range of a conventional tube are thoroughly understood. Therefore, the frequency limitations of conventional tubes will be discussed before the concepts and applications of velocity modulation are explained. You may want to review NEETS, Module 6, Introduction to Electronic Emission, Tubes, and Power Supplies, Chapters 1 and 2, for a refresher on vacuum tubes before proceeding


Frequency Limitations of Conventional Tubes

Three characteristics of ordinary vacuum tubes become increasingly important as frequency rises. These characteristics are interelectrode capacitance, lead inductance, and electron transit time. The INTERELECTRODE CAPACITANCES in a vacuum tube, at low or medium radio frequencies, produce capacitive reactances that are so large that no serious effects upon tube operation are noticeable. However, as the frequency increases, the reactances become small enough to materially affect the performance of a circuit. For example, in figure 2-1A, a 1-picofarad capacitor has a reactance of 159,000 ohms at 1 megahertz. If this capacitor was the interelectrode capacitance between the grid and plate of a tube, and the rf voltage between these electrodes was 500 volts, then 3.15 milliamperes of current would flow through the interelectrode capacitance. Current flow in this small amount would not seriously affect circuit performance. On the other hand, at a frequency of 100 megahertz the reactance would decrease to approximately 1,590 ohms and, with the same voltage applied, current would increase to 315 milliamperes (figure 2-1B). Current in this amount would definitely affect circuit performa

Figure 2-1A.—Interelectrode capacitance in a vacuum tube. 1 MEGAHERTZ.

2-1B.—Interelectrode capacitance in a vacuum tube

Figure 2-1C.—Interelectrode capacitance in a vacuum tube. INTERELECTRODE CAPACITANCE IN A TUNED-PLATE TUNED-GRID OSCILLATOR.

A good point to remember is that the higher the frequency, or the larger the interelectrode capacitance, the higher will be the current through this capacitance. The circuit in figure 2-1C, shows the interelectrode capacitance between the grid and the cathode (Cgk) in parallel with the signal source. As the frequency of the input signal increases, the effective grid-to-cathode impedance of the tube decreases because of a decrease in the reactance of the interelectrode capacitance. If the signal frequency is 100 megahertz or greater, the reactance of the grid-to-cathode capacitance is so small that much of the signal is short-circuited within the tube. Since the interelectrode capacitances are effectively in parallel with the tuned circuits, as shown in figures 2-1A, B, and C, they will also affect the frequency at which the tuned circuits resonate. Another frequency-limiting factor is the LEAD INDUCTANCE of the tube elements. Since the lead inductances within a tube are effectively in parallel with the interelectrode capacitance, the net effect is to raise the frequency limit. However, the inductance of the cathode lead is common to both the grid and plate circuits. This provides a path for degenerative feedback which reduces overall circuit efficiency third limitation caused by tube construction is TRANSIT TIME. Transit time is the time required for electrons to travel from the cathode to the plate. While some small amount of transit time is required for electrons to travel from the cathode to the plate, the time is insignificant at low frequencies. In fact, the transit time is so insignificant at low frequencies that it is generally not considered to be a hindering factor. However, at high frequencies, transit time becomes an appreciable portion of a signal cycle and begins to hinder efficiency. For example, a transit time of 1 nanosecond, which is not unusual, is only 0.001 cycle at a frequency of 1 megahertz. The same transit time becomes equal to the time required for an entire cycle at 1,000 megahertz. Transit time depends on electrode spacing and existing voltage potentials. Transit times in excess of 0.1 cycle cause a significant decrease in tube efficiency. This decrease in efficiency is caused, in part, by a phase shift between plate current and grid voltage. If the tube is to operate efficiently, the plate current must be in phase with the grid-signal voltage and 180 degrees out of phase with the plate voltage. When transit time approaches 1/4 cycle, this phase relationship between the elements does not hold true. A positive swing of a high-frequency grid signal causes electrons to leave the cathode and flow to the plate. Initially this current is in phase with the grid voltage. However, since transit time is an appreciable part of a cycle, the current arriving at the plate now lags the grid-signal voltage. As a result, the power output of the tube decreases and the plate power dissipation increases. Another loss of power occurs because of ELECTROSTATIC INDUCTION. The electrons forming the plate current also electrostatically induce potentials in the grid as they move past it. This electrostatic induction in the grid causes currents of positive charges to move back and forth in the grid structure. This back and forth action is similar to the action of hole current in semiconductor devices. When transit-time effect is not a factor (as in low frequencies), the current induced in one side of the grid by the approaching electrons is equal to the current induced on the other side by the receding electrons. The net effect is zero since the currents are in opposite directions and cancel each other. However, when transit time is an appreciable part of a cycle, the number of electrons approaching the grid is not always equal to the number going away. As a result, the induced currents do not cancel. This uncancelled current produces a power loss in the grid that is considered resistive in nature. In other words, the tube acts as if a resistor were connected between the grid and the cathode. The resistance of this imaginary resistor decreases rapidly as the frequency increases. The resistance may become so low that the grid is essentially short-circuited to the cathode, preventing proper operation of the tube. Several methods are available to reduce the limitations of conventional tubes, but none work well when frequency increases beyond 1,000 megahertz. Interelectrode capacitance can be reduced by moving the electrodes further apart or by reducing the size of the tube and its electrodes. Moving the electrodes apart increases the problems associated with transit time, and reducing the size of the tube lowers the power-handling capability. You can see that efforts to reduce certain limitations in conventional tubes are compromises that are often in direct opposition to each other. The net effect is an upper limit of approximately 1,000 megahertz, beyond which conventional tubes are not practical.

Q-1. What happens to the impedance of interelectrode capacitance as frequency increases?

Q-2. What undesirable effect is caused by the inductance of the cathode lead?

Q-3. How does transit time affect the relationship of the grid voltage and the plate current at high frequencies?

Q-4. Moving tube electrodes apart to decrease interelectrode capacitance causes an increase in the effect of what property?

Velocity Modulation

The microwave tube was developed when the use of the frequency spectrum went beyond 1,000 megahertz and into the microwave range. The microwave tube uses transit time in the conversion of dc power to radio-frequency (rf) power. The interchange of power is accomplished by using the principle of electron VELOCITY MODULATION and low-loss resonant cavities in the microwave tube. A clear understanding of microwave tubes must start with an understanding of how electrons and electric fields interact. An electron has mass and thus exhibits kinetic energy when in motion. The amount of kinetic energy in an electron is directly proportional to its velocity; that is, the higher the velocity, the higher the energy level. The basic concept of the electron energy level being directly related to electron velocity is the key principle of energy transfer and amplification in microwave tubes. An electron can be accelerated or decelerated by an electrostatic field. Figure 2-2 shows an electron moving in an electrostatic field. The direction of travel (shown by the heavy arrow) is against the electrostatic lines of force which are from positive to negative. The negatively charged electron will be attracted to the positively charged body and will increase in velocity. As its velocity increases, the energy level of the electron will also increase. Where does the electron acquire its additional energy? The only logical source is from the electrostatic field. Thus, the conclusion is clear. An electron traveling in a direction opposite to electrostatic lines of force will absorb energy and increase in velocity (accelerate).

Figure 2-2.—Moving electron gaining velocity and energy

As figure 2-3 illustrates, the opposite condition is also true. An electron traveling in the same direction as the electrostatic lines of force will decelerate by giving up energy to the field. The negatively charged body will repel the electron and cause it to decrease in velocity. When the velocity is reduced, the energy level is also reduced. The energy lost by the electron is gained by the electrostatic field.

Figure 2-3.—Moving electron losing energy and velocity

The first requirement in obtaining velocity modulation is to produce a stream of electrons which are all traveling at the same speed. The electron stream is produced by an electron gun. A simplified version of an electron gun is shown in figure 2-4A. Electrons emitted from the cathode are attracted toward the positive accelerator grid and all but a few of the electrons pass through the grid and form a beam. The electron beam then passes through a pair of closely spaced grids, called BUNCHER GRIDS. Each grid is connected to one side of a tuned circuit. The parallel-resonant tuned circuit (figure 2-4A) in the illustration represents the doughnut-shaped resonant cavity surrounding the electron stream (figure 2-4B). The buncher grids are the dashed lines at the center of the cavity and are at the same dc potential as the accelerator grid. The alternating voltage which exists across the resonant circuit causes the velocity of the electrons leaving the buncher grids to differ from the velocity of the electrons arriving at the buncher grids. The amount of difference depends on the strength and direction of the electrostatic field within the resonant cavity as the electrons pass through the grids. Figure 2-4A.—Electron gun with buncher grids

Figure 2-4B.—Electron gun with buncher grids.

The manner in which the buncher produces bunches of electrons is better understood by considering the motions of individual electrons, as illustrated in figure 2-5A. When the voltage across the grids is negative, as shown in figure 2-5B, electron 1 crossing the gap at that time is slowed. Figure 2-5C shows the potential across the gap at 0 volts; electron 2 is not affected. Electron 3 enters the gap (figure 2-5D) when the voltage across the gap is positive and its velocity is increased. The combined effect is shown in figure 2-5E. All of the electrons in the group have been bunched closer together.

Figure 2-5A.—Buncher cavity action. BUNCHER CAVITY
Figure 2-5B.—Buncher cavity action. ELECTRON #1 DECELERATED.

Figure 2-5C.—Buncher cavity action. ELECTRON #2 VELOCITY UNCHANGED.

Figure 2-5D.—Buncher cavity action. ELECTRON #3 ACCELERATED

Figure 2-5E.—Buncher cavity action. ELECTRONS BEGINNING TO BUNCH, DUE TO VELOCITY DIFFERENCES

The velocity modulation of the beam is merely a means to an end. No useful power has been produced at this point. The energy gained by the accelerated electrons is balanced by the energy lost by the decelerated electrons. However, a new and useful beam distribution will be formed if the velocity- modulated electrons are allowed to drift into an area that has no electrostatic field. As the electrons drift into the field-free area beyond the buncher cavity, bunches continue to form because of the new velocity relationships between the electrons. Unless the beam is acted upon by some other force, these bunches will tend to form and disperse until the original beam distribution is eventually reformed. The net effect of velocity modulation is to form a current-density modulated beam that varies at the same rate as the grid-signal frequency. The next step is to take useful power from the beam. The current-modulated (bunched) electron beam in figure 2-6A and B is shown in various stages of formation and dispersion. A second cavity, called a CATCHER CAVITY, must be placed at a point of maximum bunching to take useful energy from the beam (shown in figure 2-6B). The physical position of the catcher cavity is determined by the frequency of the buncher-grid signal because this signal determines the transit time of the electron bunches. Note also that both cavities are resonant at the buncher-grid frequency. The electron bunches will induce an rf voltage in the grid gap of the second cavity causing it to oscillate. Proper placement of the second cavity will cause the induced grid-gap voltage to decelerate the electron bunches as they arrive at the gap. Since the largest concentration of electrons is in the bunches, slowing the bunches causes a transfer of energy to the output cavity. The balance of energy has been disturbed because the placement of the catcher cavity is such that bunches are slowed down when they arrive at the cavity. The areas between bunches arrive at the cavity at just the right time. At this time the voltage is of the correct polarity to increase the velocity of the electrons and the beam absorbs energy. The areas between the bunches have very few electrons, so the energy removed from the beam is much greater than the energy required to speed up the electrons between the bunches. Therefore, if the second cavity is properly positioned, useful energy can be removed from a velocity- modulated electron beam.

Figure 2-6A.—Removing energy from a velocity-modulated beam

Figure 2-6B.—Removing energy from a velocity-modulated beam.


Q-1. The kinetic energy of an electron is directly proportional to what property?

Q-2. What will be the effect upon an electron traveling in the opposite direction to the lines of force in an electrostatic field?

Q-3. How is a beam of electrons velocity-modulated? Q-8. What portion of an electron gun causes the electrons to accelerate or decelerate?